English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
Add to Basket
 Local TagsRelease HistoryDetailsSummary
  High-power operation of Spintronic Terahertz emitters for THz-field-driven scanning probe microscopy at MHz repetition rates

Vaitsi, A., Sleziona, V., Parra Lopez, L., Seifert, T., Schulz, F., Sabanés, N. M., et al. (2023). High-power operation of Spintronic Terahertz emitters for THz-field-driven scanning probe microscopy at MHz repetition rates. In 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2023). IEEE. doi:10.1109/IRMMW-THz57677.2023.10299392.

Item is

 

show all hide all

Basic

show hide
Item Permalink: https://hdl.handle.net/21.11116/0000-000E-3710-2 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-3A2D-0
Genre: Conference Paper

Files

show Files

Locators

show

Creators

show
hide
 Creators:
Vaitsi, Alkisti1, Author           
Sleziona, Vivien1, Author           
Parra Lopez, Luis1, Author           
Seifert, Tom1, Author           
Schulz , Fabian, Author
Sabanés, Natalia Martin, Author
Wolf, Martin1, Author                 
Kampfrath, Tobias1, Author                 
Müller, Melanie1, Author                 
Affiliations:
1Physical Chemistry, Fritz Haber Institute, Max Planck Society, ou_634546              

Content

show
hide
Free keywords: -
 Abstract: We discuss the successful and reliable operation of spintronic Terahertz (THz) emitters at high pump powers up to ~18 Watt and MHz repetition rates for THz-field-driven scanning tunneling microscopy (THz-STM). A rotating design of the spintronic emitter (STE) allows us to operate the STE at fluences close to ~1 mJ/cm2 using 10’s μJ pulse energies at MHz repetition rates. This enables STE operation at average power densities of ~1 kW/cm2, well above the laser damage threshold of thin metal films, with minimized thermal heating and no material degradation. With this new STE design, we reach incident THz field strength of several kV/cm at the tip-sample junction of the STM, resulting in THz bias voltages of more than 10 Volts using standard tungsten tips with THz field enhancement of ~105-106. We discuss the importance of well-optimized THz beam propagation, which due to limited mirror size and long beam paths is a crucial aspect for STE-driven THz-STM operation. The scalability of the rotating STE design opens up new possibilities for the integration of broadband STE sources in applications that require high THz fields or THz power at high repetition rates.

Details

show
hide
Language(s): eng - English
 Dates: 2023-10-312023-10-31
 Publication Status: Issued
 Pages: 3
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1109/IRMMW-THz57677.2023.10299392
 Degree: -

Event

show
hide
Title: 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2023)
Place of Event: Montreal, QC, Canada
Start-/End Date: 2023-09-17 - 2023-09-22

Legal Case

show

Project information

show

Source 1

show
hide
Title: 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2023)
Source Genre: Proceedings
 Creator(s):
Affiliations:
Publ. Info: IEEE
Pages: 3 Volume / Issue: - Sequence Number: 10299392 Start / End Page: - Identifier: -