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  Pushing Up the Size Limit of Boron-doped peri-Acenes: Modular Synthesis and Characterizations

Zhang, J.-J., Yang, L., Liu, F., Serra, G., Fu, Y., Lucotti, A., et al. (2023). Pushing Up the Size Limit of Boron-doped peri-Acenes: Modular Synthesis and Characterizations. Angewandte Chemie International Edition, 62(48): e202312055. doi:10.1002/anie.202312055.

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Angew Chem Int Ed-2023-Zhang.pdf (Verlagsversion), 4MB
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Angew Chem Int Ed-2023-Zhang.pdf
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 Urheber:
Zhang, Jin-Jiang1, Autor                 
Yang, Lin2, Autor
Liu, Fupin2, Autor
Serra, Gianluca2, Autor
Fu, Yubin1, Autor                 
Lucotti, Andrea2, Autor
Popov, Alexey A.2, Autor
Tommasini, Matteo2, Autor
Ma, Ji1, Autor                 
Feng, Xinliang1, Autor                 
Affiliations:
1Department of Synthetic Materials and Functional Devices (SMFD), Max Planck Institute of Microstructure Physics, Max Planck Society, ou_3316580              
2external, ou_persistent22              

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 Zusammenfassung: Heteroatom-doped peri-acenes (PAs) have recently attracted considerable attention considering their fascinating physical properties and chemical stability. However, the precise sole addition of boron atoms along the zigzag edges of PAs remains challenging, primarily due to the limited synthetic approach. Herein, we present a novel one-pot modular synthetic strategy toward unprecedented boron-doped PAs (B-PAs), including B-[4,2]PA (1 a-2), B-[4,3]PA (1 b-2) and B-[7,2]PA (1 c-3) derivatives, through efficient intramolecular electrophilic borylation. Their chemical structures are unequivocally confirmed with a combination of mass spectrometry, NMR, and single-crystal X-ray diffraction analysis. Notably, 1 b-2 exhibits an almost planar geometry, whereas 1 a-2 displays a distinctive bowl-like distortion. Furthermore, the optoelectronic properties of this series of B-PAs are thoroughly investigated by UV/Vis absorption and fluorescence spectroscopy combined with DFT calculation. Compared with their parent all-carbon analogs, the obtained B-PAs exhibit high stability, wide energy gaps, and high photoluminescence quantum yields of up to 84 %. This study reveals the exceptional ability of boron doping to finely tune the physicochemical properties of PAs, showcasing their potential applications in optoelectronics.

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 Datum: 2023-10-122023-11-27
 Publikationsstatus: Erschienen
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 Identifikatoren: ISI: 001091979100001
DOI: 10.1002/anie.202312055
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Titel: Angewandte Chemie International Edition
  Kurztitel : Angew. Chem., Int. Ed.
Genre der Quelle: Zeitschrift
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Ort, Verlag, Ausgabe: Weinheim : Wiley-VCH
Seiten: - Band / Heft: 62 (48) Artikelnummer: e202312055 Start- / Endseite: - Identifikator: ISSN: 1433-7851
CoNE: https://pure.mpg.de/cone/journals/resource/1433-7851