Sb-doping induced order to disorder transition enhances the thermal stability 
of NbCoSn1-xSbx half-Heusler semiconductors

Jung, Chanwon; Jang, Kyuseon; Zhang, Siyuan; Bueno Villoro, Ruben; Choi, Pyuck-Pa; Scheu, Christina

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Sb-doping induced order to disorder transition enhances the thermal stability of NbCoSn1-xSbx half-Heusler semiconductors

Jung, C., Jang, K., Zhang, S., Bueno Villoro, R., Choi, P.-P., & Scheu, C. (2023). Sb-doping induced order to disorder transition enhances the thermal stability of NbCoSn1-xSbx half-Heusler semiconductors. Talk presented at The 20th International Microscopy Congress, PS-07.2. Microscopy of Semiconductor Materials and Devices. Busan, Republic of Korea. 2023-09-10 - 2023-09-15.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-433D-3 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-433E-2

Genre: Talk

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Creators:
Jung, Chanwon¹, Author
Jang, Kyuseon², Author
Zhang, Siyuan¹, Author
Bueno Villoro, Ruben¹, Author
Choi, Pyuck-Pa², Author
Scheu, Christina¹, Author

Affiliations:
1Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_2054294
2Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea, ou_persistent22

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Language(s): eng - English

Dates: Created: 2023-09-13

Publication Status: Not specified

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Title: The 20th International Microscopy Congress, PS-07.2. Microscopy of Semiconductor Materials and Devices

Place of Event: Busan, Republic of Korea

Start-/End Date: 2023-09-10 - 2023-09-15

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