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  Magnetoresistive-coupled transistor using the Weyl semimetal NbP

Rocchino, L., Balduini, F., Schmid, H., Molinari, A., Luisier, M., Süß, V., et al. (2024). Magnetoresistive-coupled transistor using the Weyl semimetal NbP. Nature Communications, 15(1): 710, pp. 1-8. doi:10.1038/s41467-024-44961-5.

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Rocchino, L.1, Author
Balduini, F.1, Author
Schmid, H.1, Author
Molinari, A.1, Author
Luisier, M.1, Author
Süß, Vicky2, Author           
Felser, Claudia3, Author           
Gotsmann, B.1, Author
Zota, C.B.1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
3Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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Free keywords: quantum dot, electric field, electrical resistivity, electromagnetic field, instrumentation, operations technology, Article, controlled study, crystal, density, electric current, electric field, electron, magnetic field, scanning electron microscopy, superconductivity, amplifier, article, limited mobility, magnetic field, nonhuman, semiconductor, superconductor, transistor
 Abstract: Semiconductor transistors operate by modulating the charge carrier concentration of a channel material through an electric field coupled by a capacitor. This mechanism is constrained by the fundamental transport physics and material properties of such devices—attenuation of the electric field, and limited mobility and charge carrier density in semiconductor channels. In this work, we demonstrate a new type of transistor that operates through a different mechanism. The channel material is a Weyl semimetal, NbP, whose resistivity is modulated via a magnetic field generated by an integrated superconductor. Due to the exceptionally large electron mobility of this material, which reaches over 1,000,000 cm2/Vs, and the strong magnetoresistive coupling, the transistor can generate significant transconductance amplification at nanowatt levels of power. This type of device can enable new low-power amplifiers, suitable for qubit readout operation in quantum computers. © 2024, The Author(s).

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Language(s): eng - English
 Dates: 2024-01-242024-01-24
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1038/s41467-024-44961-5
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Title: Nature Communications
  Abbreviation : Nat. Commun.
Source Genre: Journal
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Publ. Info: London : Nature Publishing Group
Pages: - Volume / Issue: 15 (1) Sequence Number: 710 Start / End Page: 1 - 8 Identifier: ISSN: 2041-1723
CoNE: https://pure.mpg.de/cone/journals/resource/2041-1723