English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
  Valley quantum Hall effect meets strain: Subgap formation and large increment of the Hall conductivity

Sinner, A., Engel, G., Ernst, A., & Stephanovich, V. A. (2023). Valley quantum Hall effect meets strain: Subgap formation and large increment of the Hall conductivity. Physical Review B, 108(23): 235431. doi:10.1103/PhysRevB.108.235431.

Item is

Files

show Files
hide Files
:
PhysRevB.108.235431.pdf (Publisher version), 825KB
 
File Permalink:
-
Name:
PhysRevB.108.235431.pdf
Description:
Archivkopie
OA-Status:
Visibility:
Private
MIME-Type / Checksum:
application/pdf
Technical Metadata:
Copyright Date:
-
Copyright Info:
-
License:
-

Locators

show
hide
Locator:
https://doi.org/10.1103/PhysRevB.108.235431 (Publisher version)
Description:
-
OA-Status:
Not specified

Creators

show
hide
 Creators:
Sinner, A.1, Author
Engel, G.1, Author
Ernst, Arthur2, Author                 
Stephanovich, V. A.1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society, ou_3287476              

Content

show
hide
Free keywords: -
 Abstract: We consider the effect of the uniaxial strain applied to a graphene monolayer with a realized quantum valley Hall state, for which we use a version of the Haldane model. In its specific point, the latter model has two spectral valleys: the gapless one and the gapped one. Using analytical and numerical arguments, we show that this state is unstable against mechanical deformations of the lattice, which influences the energy spectrum, the density of states, and the conductivity tensor. In particular, the Hall conductivity in the near-DC regime may surpass largely the known plateau value along with the simultaneous sign change. Above effects pave the way to the applied graphene strain engineering or straintronics. Namely, they can be used in quantum logical gates utilizing a controllable strain manipulation for reversing or on- and off-switching of the Hall current.

Details

show
hide
Language(s):
 Dates: 2023-12-222023-12-15
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1103/PhysRevB.108.235431
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Woodbury, NY : American Physical Society
Pages: - Volume / Issue: 108 (23) Sequence Number: 235431 Start / End Page: - Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008