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Abstract:
Silicon nitride (Si3N4) has been well established as an ultralow-loss material for integrated photonics, particularly for the generation of dissipative Kerr soliton frequency combs, enabling various applications for optical metrology, biological imaging, and coherent telecommunications. Typically, bright soliton generation in Si3N4 devices requires thick (>600 nm) films to fulfill the condition of anomalous dispersion at telecom wavelengths. However, thick films of ultralow-loss Si3N4 (>400 nm) often suffer from high internal stress, leading to cracks. As an alternative approach, thin Si3N4 films (<400 nm) provide the advantage of one-step deposition and are widely applied for commercial use. Here, we provide insights into engineering an integrated Si3N4 structure that achieves optimal effective nonlinearity and maintains a compact footprint. A comparative analysis of Si3N4 resonators with varying waveguide thicknesses is conducted and reveals that a 400-nm thin Si3N4 film emerges as a promising solution that strikes a balance among the aforementioned criteria. Based on a commercially available 400-nm Si3N4 film, we experimentally demonstrate the generation of low-noise coherent dark pulses with a repetition rate of 25 GHz in a multimode Si3N4 resonator. The compact spiral-shaped resonator has a footprint of 0.28 mm2 with a high-quality factor of 4 × 106. Our demonstrated dark combs with mode spacings of tens of GHz have applications in microwave photonics, optical spectroscopy, and telecommunication systems.
