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  Insulator-to-Metal Transition and Anomalously Slow Hot Carrier Cooling in a Photo-doped Mott Insulator

Choudhry, U., Zhang, J., Huang, K., Low, E., Quan, Y., Shaheen, B., et al. (2024). Insulator-to-Metal Transition and Anomalously Slow Hot Carrier Cooling in a Photo-doped Mott Insulator.

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2406.07355.pdf (Preprint), 18MB
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2406.07355.pdf
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File downloaded from arXiv at 2024-06-12
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2024
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externe Referenz:
https://arxiv.org/abs/2406.07355 (Preprint)
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 Urheber:
Choudhry, U.1, Autor
Zhang, J.2, 3, 4, Autor           
Huang, K.5, Autor
Low, E.5, Autor
Quan, Y.1, Autor
Shaheen, B.1, Autor
Gnabasik, R.1, Autor
Yan, J.6, Autor
Rubio, A.2, 3, 7, 8, Autor           
Burch, K. S.5, Autor
Liao, B.1, Autor
Affiliations:
1Department of Mechanical Engineering, University of California, ou_persistent22              
2Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_2266715              
3Center for Free-Electron Laser Science, ou_persistent22              
4Laboratory of Theoretical and Computational Nanoscience, National Center for Nanoscience and Technology, Chinese Academy of Sciences, ou_persistent22              
5Department of Physics, Boston College, ou_persistent22              
6Materials Science and Technology Division, Oak Ridge National Laboratory, ou_persistent22              
7Center for Computational Quantum Physics, The Flatiron Institute, ou_persistent22              
8Nano-Bio Spectroscopy Group, Universidad de País Vasco, ou_persistent22              

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Schlagwörter: Condensed Matter, Strongly Correlated Electrons, cond-mat.str-el, Condensed Matter, Materials Science, cond-mat.mtrl-sci
 Zusammenfassung: Photo-doped Mott insulators can exhibit novel photocarrier transport and relaxation dynamics and non-equilibrium phases. However, time-resolved real-space imaging of these processes are still lacking. Here, we use scanning ultrafast electron microscopy (SUEM) to directly visualize the spatial-temporal evolution of photoexcited species in a spin-orbit assisted Mott insulator {\alpha}-RuCl3. At low optical fluences, we observe extremely long hot photocarrier transport time over one nanosecond, almost an order of magnitude longer than any known values in conventional semiconductors. At higher optical fluences, we observe nonlinear features suggesting a photo-induced insulator-to-metal transition, which is unusual in a large-gap Mott insulator. Our results demonstrate the rich physics in a photo-doped Mott insulator that can be extracted from spatial-temporal imaging and showcase the capability of SUEM to sensitively probe photoexcitations in strongly correlated electron systems.

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Sprache(n): eng - English
 Datum: 2024-06-11
 Publikationsstatus: Online veröffentlicht
 Seiten: 35
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: Keine Begutachtung
 Identifikatoren: arXiv: 2406.07355
 Art des Abschluß: -

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