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  Uniaxial stress effect on the electronic structure of quantum materials

Jo, N. H., Gati, E., & Pfau, H. (2024). Uniaxial stress effect on the electronic structure of quantum materials. Frontiers in Electronic Materials, 4: 1392760, pp. 1-16. doi:10.3389/femat.2024.1392760.

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 Creators:
Jo, Na Hyun1, Author
Gati, Elena2, Author           
Pfau, Heike, Author
Affiliations:
1External Organizations, ou_persistent22              
2Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863462              

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 Abstract: Uniaxial stress has proven to be a powerful experimental tuning parameter for effectively controlling lattice, charge, orbital, and spin degrees of freedom in quantum materials. In addition, its ability to manipulate the symmetry of materials has garnered significant attention. Recent technical progress to combine uniaxial stress cells with quantum oscillation and angle-resolved photoemission techniques allowed to study the electronic structure as function of uniaxial stress. This review provides an overview on experimental advancements in methods and examines studies on diverse quantum materials, encompassing the semimetal WTe2, the unconventional superconductor Sr2RuO4, Fe-based superconductors, and topological materials.

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Language(s): eng - English
 Dates: 2024-05-092024-05-09
 Publication Status: Issued
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 Rev. Type: -
 Identifiers: DOI: 10.3389/femat.2024.1392760
BibTex Citekey: 10.3389/femat.2024.1392760
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Title: Frontiers in Electronic Materials
Source Genre: Journal
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Pages: - Volume / Issue: 4 Sequence Number: 1392760 Start / End Page: 1 - 16 Identifier: ISSN: 2673-9895