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  An antiferromagnetic spin phase change memory

Yan, H., Mao, H., Qin, P., Wang, J., Liang, H., Zhou, X., et al. (2024). An antiferromagnetic spin phase change memory. Nature Communications, 15(1): 4978. doi:10.1038/s41467-024-49451-2.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000F-6DDA-2 Version Permalink: https://hdl.handle.net/21.11116/0000-000F-6DDB-1
Genre: Journal Article

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 Creators:
Yan, H.1, Author
Mao, H.1, Author
Qin, P.1, Author
Wang, J.2, Author
Liang, H.3, Author
Zhou, X.1, Author
Wang, X.1, Author
Chen, H.1, Author
Meng, Z.1, Author
Liu, L.1, Author
Zhao, G.1, Author
Duan, Z.1, Author
Zhu, Z.2, Author
Fang, B.4, Author
Zeng, Z.4, Author
Bettiol, A. A.3, Author
Zhang, Q.5, Author
Tang, P.1, 6, 7, Author           
Jiang, C.1, Author
Liu, Z.1, Author
Affiliations:
1School of Materials Science and Engineering, Beihang University, ou_persistent22              
2Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, ou_persistent22              
3Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, ou_persistent22              
4Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, ou_persistent22              
5Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, ou_persistent22              
6Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_2266715              
7Center for Free-Electron Laser Science, ou_persistent22              

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 Abstract: The electrical outputs of single-layer antiferromagnetic memory devices relying on the anisotropic magnetoresistance effect are typically rather small at room temperature. Here we report a new type of antiferromagnetic memory based on the spin phase change in a Mn-Ir binary intermetallic thin film at a composition within the phase boundary between its collinear and noncollinear phases. Via a small piezoelectric strain, the spin structure of this composition-boundary metal is reversibly interconverted, leading to a large nonvolatile room-temperature resistance modulation that is two orders of magnitude greater than the anisotropic magnetoresistance effect for a metal, mimicking the well-established phase change memory from a quantum spin degree of freedom. In addition, this antiferromagnetic spin phase change memory exhibits remarkable time and temperature stabilities, and is robust in a magnetic field high up to 60 T.

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Language(s): eng - English
 Dates: 2023-12-202024-06-052024-06-11
 Publication Status: Published online
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1038/s41467-024-49451-2
 Degree: -

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Project name : Z.L. acknowledges the financial support of the National Key R&D Program of China (Grant No. 2022YFA1602700). Z.L. acknowledges the financial support of the National Key R&D Program of China (Grant No. 2022YFB3506000). Z.L. & C.J. acknowledge financial support from the National Natural Science Foundation of China (Grant No. 52121001). Z.L. acknowledges financial support from the National Natural Science Foundation of China (Grant No. 52271235). Z.L. acknowledges financial support by Beijing Natural Science Foundation (Grant No. JQ23005). P.T. was supported by the National Natural Science Foundation of China (Grants No. 12234011 and No. 12374053). Q.Z. acknowledges the National Natural Science Foundation of China (Grants No. 52322212 and No. 52072400). P.Q. acknowledges the financial support of the China National Postdoctoral Program for Innovative Talents (Grant No. BX20230451).
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Title: Nature Communications
  Abbreviation : Nat. Commun.
Source Genre: Journal
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Publ. Info: London : Nature Publishing Group
Pages: - Volume / Issue: 15 (1) Sequence Number: 4978 Start / End Page: - Identifier: ISSN: 2041-1723
CoNE: https://pure.mpg.de/cone/journals/resource/2041-1723