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  Microscopic Origin of Polarization Charges at GaN/(Al,Ga)N Interfaces

Yoo, S.-H., Todorova, M., Neugebauer, J., & Van de Walle, C. G. (2023). Microscopic Origin of Polarization Charges at GaN/(Al,Ga)N Interfaces. Physical Review Applied, 19: 064037. doi:10.1103/PhysRevApplied.19.064037.

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PhysRevApplied.19.064037.pdf (Publisher version), 3MB
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PhysRevApplied.19.064037.pdf
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Copyright Date:
2024
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The Author(s). Published by the American Physical Society.

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 Creators:
Yoo, Su-Hyun1, Author           
Todorova, Mira2, Author           
Neugebauer, Jörg1, Author           
Van de Walle, Chris G.3, Author           
Affiliations:
1Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              
2Electrochemistry and Corrosion, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_2253635              
3Materials Department, University of California, Santa Barbara, CA 93106-5050, USA, ou_persistent22              

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Language(s): eng - English
 Dates: 2023-06-12
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1103/PhysRevApplied.19.064037
 Degree: -

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Project name : Support through the DFG under Germany’s Excellence Strategy-EXC 2033-Projektnummer 390677874
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Title: Physical Review Applied
  Abbreviation : Phys. Rev. Appl.
Source Genre: Journal
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Publ. Info: College Park, Md. [u.a.] : American Physical Society
Pages: - Volume / Issue: 19 Sequence Number: 064037 Start / End Page: - Identifier: ISSN: 2331-7019
CoNE: https://pure.mpg.de/cone/journals/resource/2331-7019