Charged defects in semiconductors and beyond

Neugebauer, Jörg; Freysoldt, Christoph; Todorova, Mira; Van de Walle, Chris G.

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Charged defects in semiconductors and beyond

Neugebauer, J., Freysoldt, C., Todorova, M., & Van de Walle, C. G. (2023). Charged defects in semiconductors and beyond. Talk presented at 32nd International Conference on Defects in Semiconductors. Rehoboth Beach, DE, USA. 2023-09-10 - 2023-09-15.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000F-AB05-B Version Permalink: https://hdl.handle.net/21.11116/0000-000F-AB08-8

Genre: Talk

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Creators:
Neugebauer, Jörg¹, Author
Freysoldt, Christoph², Author
Todorova, Mira³, Author
Van de Walle, Chris G.⁴, Author

Affiliations:
1Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337
2Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863342
3Electrochemistry and Corrosion, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_2253635
4Materials Department, University of California, Santa Barbara, CA 93106-5050, USA, ou_persistent22

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Language(s): eng - English

Dates: Created: 2023-09

Publication Status: Not specified

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Title: 32nd International Conference on Defects in Semiconductors

Place of Event: Rehoboth Beach, DE, USA

Start-/End Date: 2023-09-10 - 2023-09-15

Invited: Yes

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