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  Friction and Dissipation in Epitaxial Graphene Films

Filleter, T., McChesney, J. L., Bostwick, A., Rotenberg, E., Emtsev, K. V., Seyller, T., et al. (2009). Friction and Dissipation in Epitaxial Graphene Films. Physical Review Letters, 102(8): 086102. doi:10.1103/PhysRevLett.102.086102.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-F9E2-2 Version Permalink: https://hdl.handle.net/21.11116/0000-0008-920B-7
Genre: Journal Article

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Filleter, T., Author
McChesney, Jessica L., Author
Bostwick, Aaron, Author
Rotenberg, Eli, Author
Emtsev, K. V., Author
Seyller, Thomas, Author
Horn, Karsten1, Author           
Bennewitz, R., Author
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1Molecular Physics, Fritz Haber Institute, Max Planck Society, ou_634545              

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 Abstract: We have studied friction and dissipation in single and bilayer graphene films grown epitaxially on SiC. The friction on SiC is greatly reduced by a single layer of graphene and reduced by another factor of 2 on bilayer graphene. The friction contrast between single and bilayer graphene arises from a dramatic difference in electron-phonon coupling, which we discovered by means of angle-resolved photoemission spectroscopy. Bilayer graphene as a lubricant outperforms even graphite due to reduced adhesion.

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Language(s): eng - English
 Dates: 2009-02-27
 Publication Status: Issued
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 Rev. Type: Peer
 Identifiers: eDoc: 429425
DOI: 10.1103/PhysRevLett.102.086102
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Title: Physical Review Letters
  Alternative Title : Phys. Rev. Lett.
Source Genre: Journal
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Pages: - Volume / Issue: 102 (8) Sequence Number: 086102 Start / End Page: - Identifier: ISSN: 0031-9007