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  Change of InAs/GaAs quantum dot shape and composition during capping

Eisele, H., Lenz, A., Heitz, R., Timm, R., Dähne, M., Temko, Y., et al. (2008). Change of InAs/GaAs quantum dot shape and composition during capping. Journal of Applied Physics, 104(12), 124301–1-124301–5. doi:10.1063/1.3042216.

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 Urheber:
Eisele, Holger, Autor
Lenz, Andrea, Autor
Heitz, Robert, Autor
Timm, Rainer, Autor
Dähne, Mario, Autor
Temko, Yevgeniy1, Autor           
Suzuki, Takayuki1, Autor           
Jacobi, Karl1, Autor           
Affiliations:
1Physical Chemistry, Fritz Haber Institute, Max Planck Society, ou_634546              

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Schlagwörter: gallium arsenide; III-V semiconductors; indium compounds; scanning tunnelling microscopy; semiconductor quantum dots; atomic-structure; InAs; growth; GaAs; surface
 Zusammenfassung: Using plan-view and cross-sectional scanning tunneling microscopy, the shape and composition of InAs/GaAs quantum dots are investigated before and after capping by GaAs. During capping, the original pyramidally shaped quantum dots become truncated, resulting in a flat (001) top facet and steeper side facets. The InAs quantum dots are found to be intermixed at their top with GaAs due to material rearrangement. Since the bottom interface of quantum dots and wetting layer is always sharp, this intermixing occurs during capping and not during quantum dot growth. Considering strain energies, a model for the capping is presented.

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Sprache(n): eng - English
 Datum: 2008-12-15
 Publikationsstatus: Erschienen
 Seiten: -
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: Expertenbegutachtung
 Identifikatoren: eDoc: 400781
URI: http://link.aip.org/link/?JAPIAU/104/124301/1
DOI: 10.1063/1.3042216
 Art des Abschluß: -

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Titel: Journal of Applied Physics
  Alternativer Titel : J. Appl. Phys.
Genre der Quelle: Zeitschrift
 Urheber:
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Ort, Verlag, Ausgabe: -
Seiten: - Band / Heft: 104 (12) Artikelnummer: - Start- / Endseite: 124301–1 - 124301–5 Identifikator: -