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  Linking density functional and density-matrix theory: Picosecond electron relaxation at the Si(100) surface

Buecking, N., Kratzer, P., Scheffler, M., & Knorr, A. (2008). Linking density functional and density-matrix theory: Picosecond electron relaxation at the Si(100) surface. Physical Review B, 77(23), 233305-1-233305-4. doi:10.1103/PhysRevB.77.233305.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-FCAF-2 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-002C-DDDD-6
Genre: Journal Article

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PRB-77-233305-2008.pdf (Publisher version), 102KB
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 Creators:
Buecking, Norbert1, Author           
Kratzer, Peter1, Author           
Scheffler, Matthias1, Author           
Knorr, Andreas, Author
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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 Abstract: We describe an approach that links the density-matrix theory for electron transport and relaxation with the density-functional theory for electronic structure. Our analysis of the electron dynamics at Si(100) reveals an unanticipated phonon bottleneck between bulklike and surface states. The fastest relaxation process observed in recent two-photon photoemission experiments is in good agreement with the calculated phonon-mediated intrasurface-band scattering.

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Language(s): eng - English
 Dates: 2008-06-11
 Publication Status: Issued
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 Rev. Type: Peer
 Identifiers: eDoc: 362296
DOI: 10.1103/PhysRevB.77.233305
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Title: Physical Review B
  Alternative Title : Phys. Rev. B
Source Genre: Journal
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Pages: - Volume / Issue: 77 (23) Sequence Number: - Start / End Page: 233305-1 - 233305-4 Identifier: -