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  Morphology of graphene thin film growth on SiC(0001)

Ohta, T., El Gabaly, F., Bostwick, A., McChesney, J. L., Emtsev, K. V., Schmid, A. K., et al. (2008). Morphology of graphene thin film growth on SiC(0001). New Journal of Physics, 10: 023034. doi:10.1088/1367-2630/10/2/023034.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-FD83-5 Version Permalink: https://hdl.handle.net/21.11116/0000-0007-FF71-B
Genre: Journal Article

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 Creators:
Ohta, Taisuke1, Author           
El Gabaly, Farid, Author
Bostwick, Aaron, Author
McChesney, Jessica L., Author
Emtsev, Konstantin V., Author
Schmid, Andreas K., Author
Seyller, Thomas, Author
Horn, Karsten1, Author           
Rotenberg, Eli, Author
Affiliations:
1Molecular Physics, Fritz Haber Institute, Max Planck Society, ou_634545              

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 Abstract: Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as an applications-oriented point of view. Here, we study the emerging morphology of in vacuo prepared graphene films using low-energy electron microscopy (LEEM) and angle-resolved photoemission spectroscopy (ARPES). We obtain an identification of single-layer and bilayer graphene films by comparing the characteristic features in electron reflectivity spectra in LEEM to the π-band structure as revealed by ARPES. We demonstrate that LEEM serves as a tool to accurately determine the local extent of graphene layers as well as the layer thickness.

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Language(s): eng - English
 Dates: 2008-02-21
 Publication Status: Issued
 Pages: -
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 Rev. Type: Peer
 Identifiers: eDoc: 401008
DOI: 10.1088/1367-2630/10/2/023034
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Title: New Journal of Physics
  Alternative Title : New J. Phys.
Source Genre: Journal
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Pages: - Volume / Issue: 10 Sequence Number: 023034 Start / End Page: - Identifier: ISSN: 1367-2630