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  Photoemission studies of graphene on SiC: growth, interface, and electronic structure

Bostwick, A., Emtsev, K. V., Horn, K., Huwald, E., Ley, L., McChesney, J. L., et al. (2008). Photoemission studies of graphene on SiC: growth, interface, and electronic structure. Advances in Solid State Physics, 47, 159-170. doi:10.1007/978-3-540-74325-5_13.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-FDE3-D Version Permalink: https://hdl.handle.net/21.11116/0000-0007-DA46-5
Genre: Journal Article

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 Creators:
Bostwick, Aaron, Author
Emtsev, K. V., Author
Horn, Karsten1, Author           
Huwald, E., Author
Ley, L., Author
McChesney, Jessica L., Author
Ohta, Taisuke1, Author           
Riley, J., Author
Rotenberg, Eli, Author
Speck, F., Author
Seyller, Thomas, Author
Affiliations:
1Molecular Physics, Fritz Haber Institute, Max Planck Society, ou_634545              

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Language(s): eng - English
 Dates: 2008-01-23
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 319510
DOI: 10.1007/978-3-540-74325-5_13
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Title: Advances in Solid State Physics
Source Genre: Journal
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Pages: - Volume / Issue: 47 Sequence Number: - Start / End Page: 159 - 170 Identifier: -