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  Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimensional electron gases

Buecking, N., Butscher, S., Richter, M., Weber, C., Declair, S., Woerner, M., et al. (2008). Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimensional electron gases. In Proceedings of SPIE.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-FE54-7 Version Permalink: https://hdl.handle.net/21.11116/0000-0005-A452-5
Genre: Conference Paper

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Buecking, Norbert, Author
Butscher, S., Author
Richter, M., Author
Weber, C., Author
Declair, S., Author
Woerner, M., Author
Reimann, K., Author
Kratzer, Peter, Author
Scheffler, Matthias1, Author           
Knorr, Andreas, Author
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1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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 Abstract: A theory of electron relaxation for electron gases in semiconductor quantum well structures and at semiconductor surfaces is presented. The electron relaxation is described by quantum-kinetic equations. In the nonlinear optical response of a two dimensional electron gas in a GaN quantum well, polaronic signatures are clearly enhanced compared to the linear response, if the pump pulse is tuned to the polaron energy. For the phonon-induced electron relaxation at Si (001) surface structures, the interplay of bulk and surface states yields a complex temporal relaxation dynamics depending on the slab thickness.

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Language(s): eng - English
 Dates: 2008
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 362326
DOI: 10.1117/12.768659
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Title: Proceedings of SPIE
  Alternative Title : Proc. of SPIE
Source Genre: Proceedings
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Pages: - Volume / Issue: 6892 Sequence Number: 689209 Start / End Page: - Identifier: -