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  Role of strain relaxation during different stages of InAs quantum dot growth

Hammerschmidt, T., & Kratzer, P. (2005). Role of strain relaxation during different stages of InAs quantum dot growth. In J. Menendez, & C. Van de Walle (Eds.), Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors (pp. 601-602). USA: American Institute of Physics.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-086C-4 Version Permalink: https://hdl.handle.net/21.11116/0000-0005-FB30-A
Genre: Conference Paper

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 Creators:
Hammerschmidt, Thomas1, Author           
Kratzer, Peter1, Author           
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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Language(s): eng - English
 Dates: 2005-06
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 226305
DOI: 10.1063/1.1994250
 Degree: -

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Title: 27th International Conference on the Physics of Semiconductors (ICPS-27)
Place of Event: Flagstaff, Arizona
Start-/End Date: 2004-07-26 - 2004-07-30

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Title: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors
Source Genre: Proceedings
 Creator(s):
Menendez, J., Editor
Van de Walle, C.G., Editor
Affiliations:
-
Publ. Info: USA : American Institute of Physics
Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 601 - 602 Identifier: -

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Title: AIP Conference Proceedings
Source Genre: Series
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Affiliations:
Publ. Info: -
Pages: - Volume / Issue: 772 Sequence Number: - Start / End Page: - Identifier: -