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Molecular beam epitaxy; Scanning tunneling microscopy; Growth; Surface structure, morphology, roughness, and topography; Gallium arsenide; Single crystal surfaces
Abstract:
The GaAs(-1-1-2)B surface was prepared by molecular beam epitaxy and investigated by in situ scanning tunneling microscopy with respect to structure and morphology. A remarkable surface corrugation with (0-1-1) and (-1 0-1) facets was observed at Ga-rich condition. The period of the corrugation is about 12 nm. The Ga-rich structure changed into an As-rich structure, when the sample temperature was decreased to below about 520 °C under As2 flux. The As-rich surface is also not flat but undulated on a sub-μm scale. On an atomic scale it is rather rough being composed of fragments of 1D chains along Click to view the MathML source. There is a twofold periodicity along [1-1 0], but little periodicity along [11-1].
