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  Strain induced deep electronic states around threading dislocations in GaN

Lymperakis, L., Neugebauer, J., Albrecht, M., Remmele, T., & Strunk, H. P. (2004). Strain induced deep electronic states around threading dislocations in GaN. Physical Review Letters, 93(19): 196401. doi:10.1103/PhysRevLett.93.196401.

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e196401.pdf (Publisher version), 545KB
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2004
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 Creators:
Lymperakis, Liverios1, Author           
Neugebauer, Jörg1, Author           
Albrecht, M., Author
Remmele, T., Author
Strunk, H. P., Author
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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Language(s): eng - English
 Dates: 2004-11-01
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 41746
DOI: 10.1103/PhysRevLett.93.196401
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Title: Physical Review Letters
  Other : Phys. Rev. Lett.
Source Genre: Journal
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Publ. Info: Woodbury, N.Y., etc. : American Physical Society.
Pages: - Volume / Issue: 93 (19) Sequence Number: 196401 Start / End Page: - Identifier: ISSN: 0031-9007
CoNE: https://pure.mpg.de/cone/journals/resource/954925433406