Mature InAs quantum dots on the GaAs(114)A surface

Xu, Ming Chun; Temko, Yevgeniy; Suzuki, Takayuki; Jacobi, Karl

doi:10.1063/1.1691196

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Mature InAs quantum dots on the GaAs(114)A surface

Xu, M. C., Temko, Y., Suzuki, T., & Jacobi, K. (2004). Mature InAs quantum dots on the GaAs(114)A surface. Applied Physics Letters, 84(13), 2283-2285. doi:10.1063/1.1691196.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-0CD8-0 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-0CD9-E

Genre: Journal Article

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Creators:
Xu, Ming Chun¹, Author
Temko, Yevgeniy¹, Author
Suzuki, Takayuki¹, Author
Jacobi, Karl¹, Author

Affiliations:
1Physical Chemistry, Fritz Haber Institute, Max Planck Society, ou_634546

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Free keywords: molecular-beam epitaxy; atomic-structure; GaAs; growth; shape

Abstract: InAs quantum dots (QDs), grown by molecular-beam epitaxy on GaAs(114)A surfaces, were studied in situ by atomically resolved scanning tunneling microscopy. At their mature stage, the QDs present a complicated but regular shape being bound by flat {110}, (111)A; and {2511}A facets, and a steep part composed of rather variable combinations of {110} ,(111)A, {(1) over bar(1) over bar(1) over bar }B, and {2511} surfaces. The QD shape can be derived from mature InAs QDs on GaAs(001).

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Dates: Date issued: 2004-03-29

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 127660
URI: http://scitation.aip.org/journals/doc/APPLAB-ft/vol_84/iss_13/2283_1.html
DOI: 10.1063/1.1691196

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Title: Applied Physics Letters

Alternative Title : Appl. Phys. Lett.

Source Genre: Journal

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Pages: - Volume / Issue: 84 (13) Sequence Number: - Start / End Page: 2283 - 2285 Identifier: -