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  Reconstruction of cleaved 6H-SiC surfaces

Starke, U., Tallarida, M., Kumar, A., Horn, K., Seifarth, O., & Kipp, L. (2004). Reconstruction of cleaved 6H-SiC surfaces. In R. Madar, & J. Camassel (Eds.), Materials Science Forum (pp. 391-394). Zürich, Switzerland: Trans Tech Publications Ltd.

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 Creators:
Starke, UIrich1, Author
Tallarida, Massimo2, Author           
Kumar, Ashwani2, Author           
Horn, Karsten2, Author           
Seifarth, O., Author
Kipp, L., Author
Affiliations:
1Max Planck Society, ou_persistent13              
2Molecular Physics, Fritz Haber Institute, Max Planck Society, ou_634545              

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Free keywords: surface structure; cleavage; reconstruction; Low-Energy Electron Diffraction; photoelectron spectroscopy; hexagonal surface; Si-face; C-face; SiC(0001); SiC(0001); 6H-SiC; CORE-LEVEL
 Abstract: Cleaved surfaces of silicon carbide were investigated using low-energy electron diffraction (LEED) and core level photoelectron spectroscopy (PES). Despite the hardness of SiC, cleavage is possible for basal plane surfaces. On both the Si and the C face, i.e. SiC(0001) and SiC(000 (1) over bar) flat surfaces can be obtained with a sharp LEED pattern. The observed LEED pattern is interpreted as a 3-domain superposition of (2x1) reconstructions on the basis of spot intensity differences. Si 2p and C 1s photoemission results are interpreted in view of other, stable SiC surface reconstructions. A comparison is drawn to the Si(111)-(2x1) surface where the reconstruction has been interpreted by Pandey in terms of the pi-bonded chain model.

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Language(s): eng - English
 Dates: 2004
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 200842
DOI: 10.4028/www.scientific.net/MSF.457-460.391
 Degree: -

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Title: 19th Int. Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003)
Place of Event: Lyon (France)
Start-/End Date: 2003-10-05 - 2003-10-10

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Title: Materials Science Forum
Source Genre: Proceedings
 Creator(s):
Madar, R., Editor
Camassel, J., Editor
Affiliations:
-
Publ. Info: Zürich, Switzerland : Trans Tech Publications Ltd.
Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 391 - 394 Identifier: ISSN: 0255-5476