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Free keywords:
indium compounds; III-V semiconductors; semiconductor quantum dots; scanning tunnelling microscopy; molecular beam epitaxial growth; nucleation; semiconductor growth
Abstract:
We report on InAs quantum dots grown by molecular-beam epitaxy on the stable GaAs(-5 -2 -1-1)B surface discovered recently. Atomically resolved scanning tunneling microscopy images acquired in situ reveal compact quantum dots terminated by (-10-1), (0-1-1), and (-1-1-1)B facets and an unresolved vicinal (00-1) region. A flat base of (-3-1-5)B orientation extends in front of the (-10-1) and (-1-1-1)B facets. The quantum dots exhibit a very narrow size distribution attributed to the well ordered substrate and to high nucleation efficiency.
