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Free keywords:
MOLECULAR-BEAM EPITAXY; SCANNING-TUNNELING-MICROSCOPY; ENERGY-ELECTRON-DIFFRACTION; CORE-LEVEL SHIFTS; INAS QUANTUM DOTS; ATOMIC-STRUCTURE; SEMICONDUCTOR SURFACES; GAAS(113) SURFACE; FIRST-PRINCIPLES; RECONSTRUCTION
Abstract:
We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on recent progress in our own laboratory. By adapting a commercial scanning tunneling microscope (STM) to our molecular beam epitaxy and ultra high vacuum analysis chamber system, we have been able to atomically resolve the GaAs((1) over bar(1) over bar(3) over bar )B (8x1), (114)Aalpha2(2x1), (137), (3 7 15), and (2 5 11) surface structures. In cooperation with P. Kratzer and M. Scheffler from the Theory Department of the Fritz-Haber Institute we determined the structure of some of these surfaces by comparing, total-energy calculations and STM image simulations with the atomically resolved STM images. We present the results for the {112}, {113}, and {114} surfaces. Then we describe what led us to proceed into the inner parts of the stereographic triangle and to discover the hitherto unknown stable GaAs (2 5 11) surface.
