Shape of InAs quantum dots grown on the GaAs ((113)over-bar) B surface

Suzuki, Takayuki; Temko, Yevgeniy; Jacobi, Karl

doi:10.1063/1.1489087

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Shape of InAs quantum dots grown on the GaAs ((113)over-bar) B surface

Suzuki, T., Temko, Y., & Jacobi, K. (2002). Shape of InAs quantum dots grown on the GaAs ((113)over-bar) B surface. Applied Physics Letters, 60(25), 4744-4746. doi:10.1063/1.1489087.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-1489-3 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-148A-1

Genre: Journal Article

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Creators:
Suzuki, Takayuki¹, Author
Temko, Yevgeniy¹, Author
Jacobi, Karl¹, Author

Affiliations:
1Physical Chemistry, Fritz Haber Institute, Max Planck Society, ou_634546

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Free keywords: KeyWords Plus: SCANNING-TUNNELING-MICROSCOPY; OPTICAL CHARACTERIZATION; INDEX SURFACES; (311)B GaAs; RECONSTRUCTIONS; GaAs(112)

Abstract: Abstract: Self-organized InAs quantum dots were grown by molecular-beam epitaxy on the GaAs ((1) over bar(1) over bar(3) over bar) B surface. Atomically-resolved scanning tunneling microscopy images were acquired in situ. Each quantum dot grows with the same orientation relative to the substrate, with mirror symmetry to the ((1) over bar 10) plane perpendicular to the surface, and with its central part sitting on a flat base. The shape of the central part is given by {110} and ((1) over bar(1) over bar(1) over bar) B bounding facets and a not-further-resolved round region. High-index surfaces such as ((1) over bar(5) over bar(5) over bar) B, ((3) over bar(1) over bar(5) over bar) B, and probably ((1) over bar(1) over bar(2) over bar) B are derived for the base.

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Language(s): eng - English

Dates: Date issued: 2002-06-24

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 9906
DOI: 10.1063/1.1489087

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Title: Applied Physics Letters

Alternative Title : Appl. Phys. Lett.

Source Genre: Journal

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Pages: - Volume / Issue: 60 (25) Sequence Number: - Start / End Page: 4744 - 4746 Identifier: -