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Author Keywords: molecular beam epitaxy; scanning tunneling microscopy; growth; surface structure; morphology; roughness and; topography; surface defects; gallium arsenide; single crystal surfaces; KeyWords Plus: SCANNING-TUNNELING-MICROSCOPY; ENERGY-ELECTRON-DIFFRACTION; BEAM EPITAXIAL-GROWTH; ATOMIC-STRUCTURE; SEMICONDUCTOR SURFACES; GAAS-SURFACES; RECONSTRUCTION; GAAS(113)A; MORPHOLOGY; InAs
Abstract:
Growth nuclei and surface defects are studied with scanning tunneling microscopy on the GaAs((1) over bar (1) over bar (3) over bar )13(8 x 1) surface prepared by molecular beam epitaxy. Besides steps, three types of distortions of the (8 x 1) reconstructed surface are found. First, there are growth nuclei formed by small cluster of Ga and As atoms. Second, there are zig-zigzag or zigzag-zag irregularities in the zigzag chains of the (8 x 1) reconstruction. Third, complete zigzag chains are added or removed. Based on the analysis of these surface defects, the epitaxial growth on the GaAs((1) over bar (1) over bar (3) over bar )B(8 x 1) surface is discussed.
