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  Adsorption and incorporation of silicon at GaN(0001) surfaces

Rosa, A. L., Neugebauer, J., Northrup, J. E., Lee, C.-D., & Feenstra, R. M. (2002). Adsorption and incorporation of silicon at GaN(0001) surfaces. Applied Physics Letters, 80, 2008-2010. doi:10.1063/1.1452785.

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 Creators:
Rosa, Andreia L.1, Author              
Neugebauer, Jörg1, Author              
Northrup, John E., Author
Lee, Chae-Deok, Author
Feenstra, Randall M., Author
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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Language(s): eng - English
 Dates: 2002
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 2546
DOI: 10.1063/1.1452785
 Degree: -

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Title: Applied Physics Letters
  Abbreviation : Appl. Phys. Lett.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Melville, NY : American Institute of Physics
Pages: - Volume / Issue: 80 Sequence Number: - Start / End Page: 2008 - 2010 Identifier: Other: 0003-6951
CoNE: https://pure.mpg.de/cone/journals/resource/954922836223