Adsorption and incorporation of silicon at GaN(0001) surfaces

Rosa, Andreia L.; Neugebauer, Jörg; Northrup, John E.; Lee, Chae-Deok; Feenstra, Randall M.

doi:10.1063/1.1452785

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Adsorption and incorporation of silicon at GaN(0001) surfaces

Rosa, A. L., Neugebauer, J., Northrup, J. E., Lee, C.-D., & Feenstra, R. M. (2002). Adsorption and incorporation of silicon at GaN(0001) surfaces. Applied Physics Letters, 80, 2008-2010. doi:10.1063/1.1452785.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-1692-C Version Permalink: https://hdl.handle.net/21.11116/0000-0006-A2F3-0

Genre: Journal Article

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Creators:
Rosa, Andreia L.¹, Author
Neugebauer, Jörg¹, Author
Northrup, John E., Author
Lee, Chae-Deok, Author
Feenstra, Randall M., Author

Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Language(s): eng - English

Dates: Date issued: 2002

Publication Status: Issued

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Identifiers: eDoc: 2546
DOI: 10.1063/1.1452785

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Title: Applied Physics Letters

Abbreviation : Appl. Phys. Lett.

Source Genre: Journal

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Publ. Info: Melville, NY : American Institute of Physics

Pages: - Volume / Issue: 80 Sequence Number: - Start / End Page: 2008 - 2010 Identifier: Other: 0003-6951
CoNE: https://pure.mpg.de/cone/journals/resource/954922836223