Review of structure of bare and adsorbate-covered GaN(0001) surfaces

Feenstra, R. M.; Northrup, J. E.; Neugebauer, Jörg

doi:10.1557/S1092578300000296

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Review of structure of bare and adsorbate-covered GaN(0001) surfaces

Feenstra, R. M., Northrup, J. E., & Neugebauer, J. (2002). Review of structure of bare and adsorbate-covered GaN(0001) surfaces. MRS Internet Journal of Nitride Semiconductor Research, 7: e3. doi:10.1557/S1092578300000296.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-16B4-F Version Permalink: https://hdl.handle.net/21.11116/0000-0006-7AC4-4

Genre: Journal Article

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Creators:
Feenstra, R. M., Author
Northrup, J. E., Author
Neugebauer, Jörg¹, Author

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1Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Language(s): eng - English

Dates: Published in Print: 2002

Publication Status: Published in print

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Rev. Type: Peer

Identifiers: eDoc: 8735
DOI: 10.1557/S1092578300000296

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Title: MRS Internet Journal of Nitride Semiconductor Research

Other : Mrs. Internet J. Nitride Semicond. Res.

Source Genre: Journal

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Publ. Info: Pittsburgh, PA : Materials Research Society

Pages: - Volume / Issue: 7 Sequence Number: e3 Start / End Page: - Identifier: ISSN: 1092-5783
CoNE: https://pure.mpg.de/cone/journals/resource/954928619265