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キーワード:
Energy electron-diffraction; Molecular-Beam Epitaxy; Optical-properties; Growth-rate; GaAs; Shape; GaAs(001); Islands; Size; Surface
要旨:
InAs was grown by molecular-beam epitaxy onto GaAs(001) until quantum dots (QDs) formed. At this point, the growth was interrupted and the uncovered QDs were investigated in situ by scanning tunneling microscopy (STM). Atomically resolved STILI images of the QDs revealed that four dominating bounding facets occur, whose Miller indices were identified to be {137}. The assignment of the facet orientation was based on experiments on planar high Miller index GaAs surfaces. In addition, the latter experiments indicated that (137) facets are thermodynamically stable only up to a certain size. This conclusion is assumed to explain the sharp size distribution of InAs QDs.
