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  Effect of strain on surface diffusion in semiconductor heteroepitaxy

Penev, E., Kratzer, P., & Scheffler, M. (2001). Effect of strain on surface diffusion in semiconductor heteroepitaxy. Physical Review B, 64(8): 085401. doi:10.1103/PhysRevB.64.085401.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-1913-1 Version Permalink: https://hdl.handle.net/21.11116/0000-0006-BF2D-2
Genre: Journal Article

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arXiv:cond-maat/0105397v1 [cond-mat.mtrl-sci]
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 Creators:
Penev, Evgeni1, Author           
Kratzer, Peter1, Author           
Scheffler, Matthias1, Author           
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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Language(s): eng - English
 Dates: 2001-01-252001-08-01
 Publication Status: Issued
 Pages: 9
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 2509
DOI: 10.1103/PhysRevB.64.085401
 Degree: -

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Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
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Publ. Info: Woodbury, NY : American Physical Society
Pages: 9 Volume / Issue: 64 (8) Sequence Number: 085401 Start / End Page: - Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008