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  Identification of surface anion antisite defects in (110) surfaces of III-V semiconductors

Ebert, P., Quadbeck, P., Urban, K., Henninger, B., Horn, K., Schwarz, G., et al. (2001). Identification of surface anion antisite defects in (110) surfaces of III-V semiconductors. Applied Physics Letters, 79(18), 2877-2879. doi:http://dx.doi.org/10.1063/1.1408906.

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1.1408906.pdf (Publisher version), 530KB
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2001
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 Creators:
Ebert, Ph.1, Author
Quadbeck, P.1, Author
Urban, K.1, Author
Henninger, B.2, Author           
Horn, Karsten3, Author           
Schwarz, Günther2, Author           
Neugebauer, Jörg2, Author           
Scheffler, Matthias2, Author           
Affiliations:
1Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany, ou_persistent22              
2Theory, Fritz Haber Institute, Max Planck Society, ou_634547              
3Fritz Haber Institute, Max Planck Society, ou_24021              

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Language(s): eng - English
 Dates: 2001-04-242001-07-212001-10-232001-10-29
 Publication Status: Issued
 Pages: 3
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 2492
DOI: http://dx.doi.org/10.1063/1.1408906
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Title: Applied Physics Letters
  Abbreviation : Appl. Phys. Lett.
Source Genre: Journal
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Publ. Info: Melville, NY : American Institute of Physics
Pages: 3 Volume / Issue: 79 (18) Sequence Number: - Start / End Page: 2877 - 2879 Identifier: Other: 0003-6951
CoNE: https://pure.mpg.de/cone/journals/resource/954922836223