Surface morphology of GaN surfaces during molecular beam epitaxy

Feenstra, R. M.; Chen, H.; Ramachandran, V.; Lee, C. D.; Smith, A. R.; Northrup, J. E.; Zywietz, Tosja K.; Neugebauer, Jörg; Greve, D. W.

doi:10.1142/S0218625X00000804

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Surface morphology of GaN surfaces during molecular beam epitaxy

Feenstra, R. M., Chen, H., Ramachandran, V., Lee, C. D., Smith, A. R., Northrup, J. E., et al. (2000). Surface morphology of GaN surfaces during molecular beam epitaxy. Surface Review and Letters, 7(5-6), 601-606. doi:10.1142/S0218625X00000804.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-1B89-7 Version Permalink: https://hdl.handle.net/21.11116/0000-0005-E0C9-B

Genre: Journal Article

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Feenstra, R. M., Author
Chen, H., Author
Ramachandran, V., Author
Lee, C. D., Author
Smith, A. R., Author
Northrup, J. E., Author
Zywietz, Tosja K.¹, Author
Neugebauer, Jörg¹, Author
Greve, D. W., Author

Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Dates: Date issued: 2000

Publication Status: Issued

Pages: 6

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Rev. Type: Peer

Identifiers: eDoc: 2465
DOI: 10.1142/S0218625X00000804

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Title: Surface Review and Letters

Other : Surf. Rev. Lett.

Source Genre: Journal

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Publ. Info: Singapore : World Scientific

Pages: 6 Volume / Issue: 7 (5-6) Sequence Number: - Start / End Page: 601 - 606 Identifier: ISSN: 0218-625X
CoNE: https://pure.mpg.de/cone/journals/resource/954925493953