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  Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy

Chen, H., Feenstra, R. M., Northrup, J., Zywietz, T. K., Neugebauer, J., & Greve, D. W. (2000). Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B, 18(4), 2284-2289. doi:10.1116/1.1306296.

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1.1306296.pdf (Publisher version), 251KB
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2000
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 Creators:
Chen, H., Author
Feenstra, R. M., Author
Northrup, J., Author
Zywietz, Tosja K.1, Author           
Neugebauer, Jörg1, Author           
Greve, D. W., Author
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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 Dates: 2000-04-062000-05-262000-08-02
 Publication Status: Published in print
 Pages: 6
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 2463
DOI: 10.1116/1.1306296
 Degree: -

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Title: Journal of Vacuum Science and Technology B
  Other : JVST B
Source Genre: Journal
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Publ. Info: New York : Published by AVS through the American Institute of Physics
Pages: 6 Volume / Issue: 18 (4) Sequence Number: - Start / End Page: 2284 - 2289 Identifier: ISSN: 0734-2101
CoNE: https://pure.mpg.de/cone/journals/resource/954928495416