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  GaAs(001) surface under conditions of low As pressure: Evidence for a novel surface geometry

Lee, S.-H., Moritz, W., & Scheffler, M. (2000). GaAs(001) surface under conditions of low As pressure: Evidence for a novel surface geometry. Physical Review Letters, 85, 3890-3893.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-1BDF-9 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-1BDF-9
Genre: Journal Article

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PRL-85-3890-2000.pdf (Any fulltext), 410KB
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https://hdl.handle.net/21.11116/0000-0005-E126-2
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 Creators:
Lee, Sung-Hong, Author
Moritz, W., Author
Scheffler, Matthias1, Author           
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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 Dates: 2000
 Publication Status: Issued
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 Rev. Type: Peer
 Identifiers: eDoc: 2472
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Title: Physical Review Letters
  Alternative Title : Phys. Rev. Lett.
Source Genre: Journal
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Publ. Info: -
Pages: - Volume / Issue: 85 Sequence Number: - Start / End Page: 3890 - 3893 Identifier: -