Structure of GaN(0001): The laterally contracted Ga bilayer model

Northrup, J.; Neugebauer, Jörg; Feenstra, R. M.; Smith, A. R.

doi:10.1103/PhysRevB.61.9932

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Structure of GaN(0001): The laterally contracted Ga bilayer model

Northrup, J., Neugebauer, J., Feenstra, R. M., & Smith, A. R. (2000). Structure of GaN(0001): The laterally contracted Ga bilayer model. Physical Review B, 61(4), 9932-9935. doi:10.1103/PhysRevB.61.9932.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-1BED-9 Version Permalink: https://hdl.handle.net/21.11116/0000-0005-DE2D-0

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Northrup, J., Author
Neugebauer, Jörg¹, Author
Feenstra, R. M., Author
Smith, A. R., Author

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1Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Dates: Submitted: 1999-11-23Date issued: 2000-04-15

Publication Status: Issued

Pages: 4

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Rev. Type: Peer

Identifiers: eDoc: 2475
DOI: 10.1103/PhysRevB.61.9932

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Title: Physical Review B

Abbreviation : Phys. Rev. B

Source Genre: Journal

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Publ. Info: Woodbury, NY : American Physical Society

Pages: - Volume / Issue: 61 (4) Sequence Number: - Start / End Page: 9932 - 9935 Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008