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  Energetics of clean and In-covered GaN(1011) surfaces: Implications for inverted pyramid defect formation and the origin of chemical ordering in InGaN alloys

Northrup, J. E., Romano, L. T., & Neugebauer, J. (1999). Energetics of clean and In-covered GaN(1011) surfaces: Implications for inverted pyramid defect formation and the origin of chemical ordering in InGaN alloys. Applied Physics Letters, 74(16), 2319-2322. doi:10.1063/1.123837.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-1D2B-F Version Permalink: https://hdl.handle.net/21.11116/0000-0007-4991-3
Genre: Journal Article

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1.123837.pdf (Publisher version), 381KB
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1999
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 Creators:
Northrup, J. E., Author
Romano, L. T., Author
Neugebauer, Jörg1, Author           
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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Language(s): eng - English
 Dates: 1998-12-111999-02-151999-04-141999-04-19
 Publication Status: Issued
 Pages: 3
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 2436
DOI: 10.1063/1.123837
 Degree: -

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Title: Applied Physics Letters
  Abbreviation : Appl. Phys. Lett.
Source Genre: Journal
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Publ. Info: Melville, NY : American Institute of Physics
Pages: 3 Volume / Issue: 74 (16) Sequence Number: - Start / End Page: 2319 - 2322 Identifier: Other: 0003-6951
CoNE: https://pure.mpg.de/cone/journals/resource/954922836223