Phase stability and segregation of In_xGa_1-xN alloys

Grosse, F.; Neugebauer, Jörg; Scheffler, Matthias

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Phase stability and segregation of In_xGa_1-xN alloys

Grosse, F., Neugebauer, J., & Scheffler, M. (1999). Phase stability and segregation of In_xGa_1-xN alloys. In G. David (Ed.), Proceedings 24th International Conference on the Physics of Semiconductors 1999. Singapore: World Scientific.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-1D81-D Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0024-D1FD-E

Genre: Conference Paper

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Creators:
Grosse, F.¹, Author
Neugebauer, Jörg¹, Author
Scheffler, Matthias¹, Author

Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Language(s): eng - English

Dates: Date issued: 1999

Publication Status: Issued

Pages: XXVII, 301

Publishing info: -

Table of Contents: -

Rev. Type: -

Identifiers: eDoc: 2419

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Title: International Conference on the Physics of Semiconductors 1999

Place of Event: Jerusalem

Start-/End Date: 1998-08-02 - 1998-08-07

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Title: Proceedings 24th International Conference on the Physics of Semiconductors 1999

Source Genre: Proceedings

Creator(s):
David, Gershoni., Editor

Affiliations:
-

Publ. Info: Singapore : World Scientific

Pages: - Volume / Issue: - Sequence Number: - Start / End Page: - Identifier: -