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  Doping of AlGaN alloys

Van de Walle, C. G., Stampfl, C., Neugebauer, J., McCluskey, M. D., & Johnson, N. M. (1999). Doping of AlGaN alloys. MRS Internet Journal of Nitride Semiconductor Research, 4S1, U901-U912.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-1D9C-4 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0024-D209-C
Genre: Journal Article

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 Creators:
Van de Walle, Chris G., Author
Stampfl, Catherine1, Author           
Neugebauer, Jörg1, Author           
McCluskey, M. D., Author
Johnson, N. M., Author
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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 Dates: 1999
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 2454
 Degree: -

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Title: MRS Internet Journal of Nitride Semiconductor Research
  Other : Mrs. Internet J. Nitride Semicond. Res.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Pittsburgh, PA : Materials Research Society
Pages: - Volume / Issue: 4S1 Sequence Number: - Start / End Page: U901 - U912 Identifier: ISSN: 1092-5783
CoNE: https://pure.mpg.de/cone/journals/resource/954928619265