Doping of AlGaN alloys

Van de Walle, Chris G.; Stampfl, Catherine; Neugebauer, Jörg; McCluskey, M. D.; Johnson, N. M.

doi:10.1557/S1092578300003574

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Doping of AlGaN alloys

Van de Walle, C. G., Stampfl, C., Neugebauer, J., McCluskey, M. D., & Johnson, N. M. (1999). Doping of AlGaN alloys. MRS Internet Journal of Nitride Semiconductor Research, 4(S1), 901-912. doi:10.1557/S1092578300003574.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-1D9C-4 Version Permalink: https://hdl.handle.net/21.11116/0000-0007-8266-3

Genre: Journal Article

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Creators:
Van de Walle, Chris G., Author
Stampfl, Catherine¹, Author
Neugebauer, Jörg¹, Author
McCluskey, M. D., Author
Johnson, N. M., Author

Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Language(s): eng - English

Dates: Date issued: 1999

Publication Status: Issued

Pages: 12

Publishing info: -

Table of Contents: -

Rev. Type: Peer

Identifiers: eDoc: 2454
DOI: 10.1557/S1092578300003574

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Title: MRS Internet Journal of Nitride Semiconductor Research

Other : Mrs. Internet J. Nitride Semicond. Res.

Source Genre: Journal

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Publ. Info: Pittsburgh, PA : Materials Research Society

Pages: 12 Volume / Issue: 4 (S1) Sequence Number: - Start / End Page: 901 - 912 Identifier: ISSN: 1092-5783
CoNE: https://pure.mpg.de/cone/journals/resource/954928619265