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  Doping of Al_xGa_1-xN alloys

Stampfl, C., Neugebauer, J., & Van de Walle, C. G. (1999). Doping of Al_xGa_1-xN alloys. Materials Science and Engineering B, 59(1-3), 253-257. doi:10.1016/S0921-5107(98)00347-X.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-1DB9-2 Version Permalink: https://hdl.handle.net/21.11116/0000-0007-6D66-D
Genre: Journal Article

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Mat-Sci-Eng-B-59-253-1999.pdf (Any fulltext), 109KB
 
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1999
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Elsevier
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 Creators:
Stampfl, Catherine1, Author           
Neugebauer, Jörg1, Author           
Van de Walle, Chris G., Author
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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Language(s): eng - English
 Dates: 1999-05-06
 Publication Status: Issued
 Pages: 5
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 2446
DOI: 10.1016/S0921-5107(98)00347-X
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Title: Materials Science and Engineering B
  Other : Mater. Sci. Eng. B
Source Genre: Journal
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Publ. Info: Lausanne, Switzerland : Elsevier
Pages: 5 Volume / Issue: 59 (1-3) Sequence Number: - Start / End Page: 253 - 257 Identifier: ISSN: 0921-5107
CoNE: https://pure.mpg.de/cone/journals/resource/954928498465