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  Model for nucleation in GaAs homoepitaxy derived from first principles

Kratzer, P., Morgan, C. G., & Scheffler, M. (1999). Model for nucleation in GaAs homoepitaxy derived from first principles. Physical Review B, 59(23), 15246-15252. doi:10.1103/PhysRevB.59.15246.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-1DCA-B Version Permalink: https://hdl.handle.net/21.11116/0000-0007-4812-4
Genre: Journal Article

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PRB-59-15246-1999.pdf (Any fulltext), 278KB
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 Creators:
Kratzer, Peter1, Author           
Morgan, C. G., Author
Scheffler, Matthias1, Author           
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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Language(s): eng - English
 Dates: 1998-12-151999-06-15
 Publication Status: Issued
 Pages: 7
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 2428
DOI: 10.1103/PhysRevB.59.15246
 Degree: -

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Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Woodbury, NY : American Physical Society
Pages: 7 Volume / Issue: 59 (23) Sequence Number: - Start / End Page: 15246 - 15252 Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008