Theory of doping and defects in III-V nitrides

Van de Walle, Chris G.; Stampfl, Catherine; Neugebauer, Jörg

doi:10.1016/S0022-0248(98)00340-6

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Theory of doping and defects in III-V nitrides

Van de Walle, C. G., Stampfl, C., & Neugebauer, J. (1998). Theory of doping and defects in III-V nitrides. Journal of Crystal Growth, 189/190, 505-510. doi:10.1016/S0022-0248(98)00340-6.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-1EC5-D Version Permalink: https://hdl.handle.net/21.11116/0000-0007-0CA6-1

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J-Cryst-Growth-189-505-1998.pdf (Any fulltext), 140KB

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1998

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Creators:
Van de Walle, Chris G., Author
Stampfl, Catherine, Author
Neugebauer, Jörg¹, Author

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1Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Language(s): eng - English

Dates: Date issued: 1998

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 2397
DOI: 10.1016/S0022-0248(98)00340-6

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Title: Journal of Crystal Growth

Source Genre: Journal

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Publ. Info: Amsterdam : North-Holland

Pages: - Volume / Issue: 189/190 Sequence Number: - Start / End Page: 505 - 510 Identifier: ISSN: 0022-0248
CoNE: https://pure.mpg.de/cone/journals/resource/954925412860