Small valence-band offsets at GaN/InGaN heterojunctions

Van de Walle, Chris G.; Neugebauer, Jörg

doi:10.1063/1.118924

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Small valence-band offsets at GaN/InGaN heterojunctions

Van de Walle, C. G., & Neugebauer, J. (1997). Small valence-band offsets at GaN/InGaN heterojunctions. Applied Physics Letters, 70(19), 2577-2579. doi:10.1063/1.118924.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-1F14-2 Version Permalink: https://hdl.handle.net/21.11116/0000-0007-4B99-9

Genre: Journal Article

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Creators:
Van de Walle, Chris G., Author
Neugebauer, Jörg¹, Author

Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Language(s): eng - English

Dates: Date issued: 1997

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 2364
DOI: 10.1063/1.118924

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Title: Applied Physics Letters

Abbreviation : Appl. Phys. Lett.

Source Genre: Journal

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Publ. Info: Melville, NY : American Institute of Physics

Pages: - Volume / Issue: 70 (19) Sequence Number: - Start / End Page: 2577 - 2579 Identifier: Other: 0003-6951
CoNE: https://pure.mpg.de/cone/journals/resource/954922836223