Defects and doping in III-V nitrides

Van de Walle, Chris G.; Neugebauer, Jörg

doi:10.4028/www.scientific.net/MSF.258-263.19

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Defects and doping in III-V nitrides

Van de Walle, C. G., & Neugebauer, J. (1997). Defects and doping in III-V nitrides. Materials Science Forum, 258-263, 19-26. doi:10.4028/www.scientific.net/MSF.258-263.19.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-1F45-5 Version Permalink: https://hdl.handle.net/21.11116/0000-0007-4B9F-3

Genre: Journal Article

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Creators:
Van de Walle, Chris G., Author
Neugebauer, Jörg¹, Author

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1Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Language(s): eng - English

Dates: Date issued: 1997

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 2363
DOI: 10.4028/www.scientific.net/MSF.258-263.19

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Title: Materials Science Forum

Abbreviation : Mater. Sci. Forum

Source Genre: Journal

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Publ. Info: Zürich, Switzerland : Trans Tech Publications

Pages: - Volume / Issue: 258-263 Sequence Number: - Start / End Page: 19 - 26 Identifier: ISSN: 0255-5476
CoNE: https://pure.mpg.de/cone/journals/resource/954928550320