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  Probing by in situ scanning tunneling microscopy the influence of an organic additive on Si etching in NaOH

Allongue, P., Bertagna, V., Kieling, V., & Gerischer, H. (1994). Probing by in situ scanning tunneling microscopy the influence of an organic additive on Si etching in NaOH. Journal of Vacuum Science & Technology B, 12(3), 1539-1542. doi:10.1116/1.587281.

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 Creators:
Allongue, Philippe, Author
Bertagna, Valérie, Author
Kieling, Virginia, Author
Gerischer, Heinz1, Author           
Affiliations:
1Physical Chemistry, Fritz Haber Institute, Max Planck Society, ou_634546              

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Free keywords: silicon; etching; STM; surface structure; surfactants; electrochemistry; dissolution; in-situ processing
 Abstract: The etching of Si in alkaline solution is used to fabricate microstructures. A recent study has described the etching reaction at a molecular level. The present paper studies, with in situ scanning tunneling microscopy, the effect of a surfactant (triton) on Si etching and its consequences regarding the resulting surface topography, which is an important question in the preparation of substrates.

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Language(s): eng - English
 Dates: 1994-05
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 430373
DOI: 10.1116/1.587281
 Degree: -

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Title: Journal of Vacuum Science & Technology B
  Alternative Title : J. Vac. Sci. Technol. B
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: -
Pages: - Volume / Issue: 12 (3) Sequence Number: - Start / End Page: 1539 - 1542 Identifier: -