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  The formation of a Schottky barrier: Na on GaAs(110)

Heinemann, M., & Scheffler, M. (1994). The formation of a Schottky barrier: Na on GaAs(110). Proc. 4th Int. Conf. on the Formation of Semiconductor Interfaces (ICFSI-4), 297-300.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0011-210F-1 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0011-2111-A
Genre: Journal Article

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 Creators:
Heinemann, M.1, Author              
Scheffler, Matthias1, Author              
Lengeler, B., Editor
Lüth, H., Editor
Mönch, W., Editor
Pollmann, J., Editor
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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 Dates: 1994
 Publication Status: Published in print
 Pages: -
 Publishing info: -
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 Rev. Method: -
 Identifiers: eDoc: 2215
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Title: Proc. 4th Int. Conf. on the Formation of Semiconductor Interfaces (ICFSI-4)
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: -
Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 297 - 300 Identifier: -