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  The formation of a Schottky barrier: Na on GaAs(110)

Heinemann, M., & Scheffler, M. (1994). The formation of a Schottky barrier: Na on GaAs(110). In B. Lengeler, H. Lüth, W. Mönch, & J. Pollmann (Eds.), Formation of Semiconductor Interfaces (pp. 297-300). Singapore: World Scientific.

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 Creators:
Heinemann, Martina1, Author              
Scheffler, Matthias1, Author              
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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Language(s): eng - English
 Dates: 1994
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 2215
 Degree: -

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Title: 4th International Conference on the Formation of Semiconductor Interfaces (ICFSI)
Place of Event: Jülich, Germany
Start-/End Date: 1993-06-14 - 1993-06-18

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Title: Formation of Semiconductor Interfaces
Source Genre: Proceedings
 Creator(s):
Lengeler, Bruno, Editor
Lüth, Hans, Editor
Mönch, Winfried, Editor
Pollmann, Johannes, Editor
Affiliations:
-
Publ. Info: Singapore : World Scientific
Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 297 - 300 Identifier: ISBN: 9810215592