ausblenden:
Schlagwörter:
electrochemistry; etching; interfaces; semiconductors; transform infrared-spectroscopy; n-type silicon; HF treatment; hydrogen termination; surface-morphology; Si(111) surfaces; Si; adsorption; water; Si(100)
Zusammenfassung:
The present experience of the electrochemical dissolution of silicon and previous assumptions upon the mechanism are briefly reviewed. A new model is developed which explains how the coverage of the surface by hydrogen can be maintained in spite of the continuous anodic dissolution.
