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キーワード:
electrochemistry; etching; interfaces; semiconductors; transform infrared-spectroscopy; n-type silicon; HF treatment; hydrogen termination; surface-morphology; Si(111) surfaces; Si; adsorption; water; Si(100)
要旨:
The present experience of the electrochemical dissolution of silicon and previous assumptions upon the mechanism are briefly reviewed. A new model is developed which explains how the coverage of the surface by hydrogen can be maintained in spite of the continuous anodic dissolution.
