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  Electronic and structural properties of GaN by the full-potential linear muffin-tin orbitals method: The role of the d electrons

Fiorentini, V., Methfessel, M., & Scheffler, M. (1993). Electronic and structural properties of GaN by the full-potential linear muffin-tin orbitals method: The role of the d electrons. Physical Review B, 47(20), 13353-13362. doi:10.1103/PhysRevB.47.13353.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-21C3-9 Version Permalink: https://hdl.handle.net/21.11116/0000-0008-5338-C
Genre: Journal Article

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PRB-47-13353-1993.pdf (Any fulltext), 3MB
 
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 Creators:
Fiorentini, Vincenzo1, Author           
Methfessel, Michael1, Author           
Scheffler, Matthias1, Author           
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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Language(s): eng - English
 Dates: 1993
 Publication Status: Issued
 Pages: -
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 Rev. Type: Peer
 Identifiers: eDoc: 2153
DOI: 10.1103/PhysRevB.47.13353
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Title: Physical Review B
  Alternative Title : Phys. Rev. B
Source Genre: Journal
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Pages: - Volume / Issue: 47 (20) Sequence Number: - Start / End Page: 13353 - 13362 Identifier: -